1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | ±20V |
---|---|
Vgs(th)(Max)@Id | 68W (Tc) |
Vgs | - |
FETFeature | TO-220AB |
DraintoSourceVoltage(Vdss) | 19A (Tc) |
OperatingTemperature | 55 V |
DriveVoltage(MaxRdsOn | 100mOhm @ 10A, 10V |
ProductStatus | Active |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | 35 nC @ 10 V |
InputCapacitance(Ciss)(Max)@Vds | Through Hole |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 620 pF @ 25 V |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 10V |
Vgs(Max) | -55°C ~ 175°C (TJ) |
MinRdsOn) | 4V @ 250µA |
Package | Bulk |
PowerDissipation(Max) | TO-220-3 |
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