1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $2.3785 | $2.3309 | $2.2596 | $2.1882 | $2.0931 | Get Quotation! |
Min Operating Temperature | -40 °C |
---|---|
Schedule B | 8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000 |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 60 V |
Operating Supply Current | 12 A |
Number of Channels | 1 |
Lifecycle Status | Production (Last Updated: 2 years ago) |
Voltage | 60 V |
Number of Pins | 3 |
Height | 4.4 mm |
Width | 9.25 mm |
Rds On Max | 30 mΩ |
Max Power Dissipation | 149 W |
On-State Resistance | 30 mΩ |
REACH SVHC | No SVHC |
Output Current | 12 A |
Turn-On Delay Time | 100 µs |
Max Dual Supply Voltage | 60 V |
Number of Outputs | 1 |
Resistance | 25 mΩ |
Max Operating Temperature | 150 °C |
Power Dissipation | 149 W |
Nominal Input Voltage | 60 V |
Length | 10 mm |
Turn-Off Delay Time | 170 ns |
Halogen Free | Not Halogen Free |
Output Current per Channel | 12 A |
Packaging | Tape & Reel |
Package Quantity | 1000 |
Current | 12 A |
Output Voltage | 60 V |
Max Output Current | 100 A |
Case/Package | TO-263-3 |
Infineon
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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