shengyuic
shengyuic
sale@shengyuic.com
DMA150E1600NA
the part number is DMA150E1600NA
Part
DMA150E1600NA
Manufacturer
Description
DIODE GP 1.6KV 150A SOT227B
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $37.4319 $36.6833 $35.5603 $34.4373 $32.9401 Get Quotation!
Specification
Current-ReverseLeakage@Vr 200 µA @ 1600 V
Speed Standard Recovery >500ns, > 200mA (Io)
F Chassis Mount
ProductStatus Active
Package/Case SOT-227B
Grade -
Capacitance@Vr 60pF @ 400V, 1MHz
ReverseRecoveryTime(trr) -
MountingType SOT-227-4, miniBLOC
Series -
Qualification
SupplierDevicePackage -40°C ~ 150°C
Voltage-Forward(Vf)(Max)@If 1.15 V @ 150 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 1600 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 150A
Package Tube
Related Parts For DMA150E1600NA
DMA100A1600NB

IXYS

PWRDIODEDISC-RECTIFIER SOT-227UI

DMA10I1600PA

IXYS

DIODE GEN PURP 1.6KV 10A TO220AC

DMA10IM1200UZ-TRL

IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

DMA10IM1200UZ-TUB

IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

DMA10IM1600PZ-TRL

IXYS

DIODE GEN PURP 1.6KV 10A TO263HV

DMA10IM1600PZ-TUB

IXYS

DIODE GEN PURP 1.6KV 10A TO263HV

DMA10IM1600UZ-TRL

IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

DMA10IM1600UZ-TUB

IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

DMA10P1200HR

IXYS

DIODE GEN PURP 1.2KV 10A ISO247

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!