1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
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Mount | Through Hole |
Fall Time | 17 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 500 V |
Drain to Source Resistance | 520 mΩ |
Element Configuration | Single |
Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
Number of Pins | 3 |
Number of Elements | 1 |
Input Capacitance | 680 pF |
Rds On Max | 520 mΩ |
Max Power Dissipation | 66 W |
Drain to Source Breakdown Voltage | 500 V |
On-State Resistance | 520 mΩ |
Nominal Vgs | 3 V |
Gate to Source Voltage (Vgs) | 20 V |
Turn-On Delay Time | 35 ns |
Max Dual Supply Voltage | 500 V |
Max Operating Temperature | 150 °C |
Power Dissipation | 66 W |
Continuous Drain Current (ID) | 7.1 A |
Rise Time | 14 ns |
Turn-Off Delay Time | 80 ns |
Package Quantity | 1500 |
Case/Package | TO-251 |
Infineon
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC, TO-251, 3 PIN
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