shengyuic
shengyuic
sale@shengyuic.com
MT29RZ4B2DZZHHWD-18I.84F
the part number is MT29RZ4B2DZZHHWD-18I.84F
Part
MT29RZ4B2DZZHHWD-18I.84F
Manufacturer
Description
IC FLASH RAM 4G PARALLEL 533MHZ
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Memory Type: Non-Volatile
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2) Parallel 533MHz
Voltage - Supply: 1.8V
Clock Frequency: 533MHz
Memory Size: 4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2)
Memory Interface: Parallel
Write Cycle Time - Word, Page: -
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Email: sale@shengyuic.com
Series: -
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Operating Temperature: -40°C ~ 85°C (TA)
Related Parts For MT29RZ4B2DZZHHWD-18I.84F
MT29AZ2B1BHGTN-18IT.111

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ2B1BHGTN-18IT.111 TR

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ2B2BHGTN-18IT.110

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ2B2BHGTN-18IT.110 TR

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ5A3CHHTB-18AAT.109

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHTB-18AAT.109 TR

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHTB-18AIT.109

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHTB-18AIT.109 TR

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHWD-18AAT.84F

Micron Technology Inc.

IC FLASH RAM 4GBIT PAR 162VFBGA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!