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RS1E200BNTB
the part number is RS1E200BNTB
Part
RS1E200BNTB
Manufacturer
Description
MOSFET N-CH 30V 20A 8HSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
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Uni Price $0.728 $0.7134 $0.6916 $0.6698 $0.6406 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 40 Weeks
Email: sale@shengyuic.com
FET Type: N-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Other Names: RS1E200BNTBTR
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Operating Temperature: 150°C (TJ)
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