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SI3812DV-T1-GE3
the part number is SI3812DV-T1-GE3
Part
SI3812DV-T1-GE3
Manufacturer
Description
MOSFET N-CH 20V 2A 6-TSOP
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 830mW (Ta)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 20V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP
FET Feature: Schottky Diode (Isolated)
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: LITTLE FOOT®
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
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