shengyuic
shengyuic
sale@shengyuic.com
SQ4961EY-T1_GE3
the part number is SQ4961EY-T1_GE3
Part
SQ4961EY-T1_GE3
Manufacturer
Description
MOSFET DUAL P-CHAN 60V SO8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2956 $1.2697 $1.2308 $1.192 $1.1401 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 60V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: Mosfet Array 2 P-Channel (Dual) 60V 4.4A (Tc) 3.3W Surface Mount 8-SO
FET Feature: Standard
Power - Max: 3.3W
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: 2 P-Channel (Dual)
Series: Automotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Other Names: SQ4961EY-T1_GE3TR
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For SQ4961EY-T1_GE3
SQ4917CEY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

SQ4917EY-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

SQ4917EY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

SQ4920EY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!