shengyuic
shengyuic
sale@shengyuic.com
VS-EMG050J60N
the part number is VS-EMG050J60N
Part
VS-EMG050J60N
Description
IGBT MOD 600V 88A 338W EMIPAK2
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Configuration Half Bridge
Voltage-CollectorEmitterBreakdown(Max) 600 V
OperatingTemperature EMIPAK2
ProductStatus Obsolete
Package/Case Chassis Mount
NTCThermistor 150°C (TJ)
MountingType EMIPAK2
Current-CollectorCutoff(Max) 9.5 nF @ 30 V
Series -
Input Yes
SupplierDevicePackage
InputCapacitance(Cies)@Vce Standard
Vce(on)(Max)@Vge 2.1V @ 15V, 50A
Current-Collector(Ic)(Max) 88 A
Ic 100 µA
Package Bulk
Power-Max 338 W
IGBTType -
Related Parts For VS-EMG050J60N
VS-E4PH3006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PH3006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PH6006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GP 600V 60A TO247AC

VS-E4PH6006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

VS-E4PU3006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PU3006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AD

VS-E4PU6006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

VS-E4PU6006LHN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

VS-E4TU2006FP-N3

Vishay General Semiconductor - Diodes Division

DIODE GP 600V 20A TO220-2FP

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!