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18N10
the part number is 18N10
Part
18N10
Manufacturer
Description
N100V,RD(MAX)<53M@10V,RD(MAX)<63
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.1782 $0.1746 $0.1693 $0.1639 $0.1568 Get Quotation!
Specification
RdsOn(Max)@Id 3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 28 nC @ 10 V
FETFeature 62.5W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-252 (DPAK)
InputCapacitance(Ciss)(Max)@Vds Standard
Series TrenchFET®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 25A (Tc)
Vgs(Max) 1318 pF @ 50 V
MinRdsOn) 53mOhm @ 10A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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18N10

Goford Semiconductor

N100V,RD(MAX)<53M@10V,RD(MAX)<63

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!