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1N8031-GA
the part number is 1N8031-GA
Part
1N8031-GA
Manufacturer
Description
DIODE SIL CARBIDE 650V 1A TO276
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Current-ReverseLeakage@Vr 76pF @ 1V, 1MHz
Speed No Recovery Time > 500mA (Io)
F TO-276AA
ProductStatus Obsolete
Package/Case -55°C ~ 250°C
Grade -
Capacitance@Vr Through Hole
ReverseRecoveryTime(trr) 5 µA @ 650 V
MountingType TO-276
Series -
Qualification
SupplierDevicePackage 0 ns
Voltage-Forward(Vf)(Max)@If 1.5 V @ 1 A
Technology SiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max) 650 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 1A
Package Tube
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