shengyuic
shengyuic
sale@shengyuic.com
70P265L65BYGI8
the part number is 70P265L65BYGI8
Part
70P265L65BYGI8
Description
IC SRAM 256K PARALLEL 100CABGA
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Access Time: 65ns
Packaging: Tape & Reel (TR)
Supplier Device Package: 100-CABGA (6x6)
Memory Type: Volatile
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: SRAM - Dual Port, Asynchronous Memory IC 256Kb (16K x 16) Parallel 65ns 100-CABGA (6x6)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Write Cycle Time - Word, Page: 65ns
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Email: sale@shengyuic.com
Series: -
Other Names: IDT70P265L65BYGI8 IDT70P265L65BYGI8-ND
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Operating Temperature: -40°C ~ 85°C (TA)
Related Parts For 70P265L65BYGI8
70P249L65BYGI

Renesas Electronics Corporation

IC SRAM 64KBIT PARALLEL 100CABGA

70P249L65BYGI8

Renesas

SRAM Chip Async Dual 1.8/2.5/3V 64K-bit 4K x 16 65ns 100-Pin CA-BGA T/R

70P249L90BYGI8

Renesas Electronics Corporation

IC SRAM 64KBIT PARALLEL 100CABGA

70P254L55BYGI

Renesas

8K x16 Low Power Dual-Port RAM

70P254L55BYGI8

Integrated Device Technology

IC SRAM 128K PARALLEL 81CABGA

70P255L65BYGI

Renesas

SRAM Low Power Dual-Port RAM IC

70P255L65BYGI8

Renesas Electronics Corporation

IC SRAM 128KBIT PAR 100CABGA

70P265L65BYGI8

Integrated Device Technology

IC SRAM 256K PARALLEL 100CABGA

70P269L65BYGI

Renesas

SRAM Chip Async Dual 1.8V 256K-Bit 16K x 16 65ns 100-Pin CABGA Tray

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!