shengyuic
shengyuic
sale@shengyuic.com
BYC30JT-600PSQ
the part number is BYC30JT-600PSQ
Part
BYC30JT-600PSQ
Manufacturer
Description
DIODE GEN PURP 600V 30A TO3PF
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.8802 $1.8426 $1.7862 $1.7298 $1.6546 Get Quotation!
Specification
Current-ReverseLeakage@Vr -
Speed Fast Recovery =< 500ns, > 200mA (Io)
F -
ProductStatus Active
Package/Case TO-3PFM, SC-93-3
Grade 22 ns
Capacitance@Vr -
ReverseRecoveryTime(trr) 10 µA @ 600 V
MountingType Through Hole
Series -
Qualification
SupplierDevicePackage TO-3PF
Voltage-Forward(Vf)(Max)@If 2.75 V @ 30 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 600 V
OperatingTemperature-Junction 175°C
Current-AverageRectified(Io) 30A
Package Tube
Related Parts For BYC30JT-600PSQ
BYC30-1200P

WeEn Semiconductors

TO220-2

BYC30-1200PQ

WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO220AC

BYC30-600P

WeEn Semiconductors

TO220-2

BYC30-600P,127

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO220AC

BYC30B-600PJ

WeEn Semiconductors

DIODE GEN PURP 600V 30A D2PAK

BYC30DW-600P

WeEn Semiconductors

TO-3P

BYC30DW-600PQ

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-2

BYC30JT-600PSQ

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO3PF

BYC30M-650PQ

WeEn Semiconductors

BYC30M-650P/TO220-2L/STANDARD MA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!