shengyuic
shengyuic
sale@shengyuic.com
BYWB29-100-E3/45
the part number is BYWB29-100-E3/45
Part
BYWB29-100-E3/45
Description
DIODE GEN PURP 100V 8A TO263AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5782 $0.5666 $0.5493 $0.5319 $0.5088 Get Quotation!
Specification
Current-ReverseLeakage@Vr 10 µA @ 100 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F -
ProductStatus Last Time Buy
Package/Case Surface Mount
Grade -65°C ~ 150°C
Capacitance@Vr -
ReverseRecoveryTime(trr) 25 ns
MountingType -
Series -
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Voltage-Forward(Vf)(Max)@If 1.3 V @ 20 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 100 V
OperatingTemperature-Junction TO-263AB (D2PAK)
Current-AverageRectified(Io) 8A
Package Tube
Related Parts For BYWB29-100-E3/45
BYWB29-100-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-100-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-100HE3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-100HE3_A/P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 8A TO263AB

BYWB29-150-E3/45

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

BYWB29-150-E3/81

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

BYWB29-150HE3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!