shengyuic
shengyuic
sale@shengyuic.com
DMS3014SFG-13
the part number is DMS3014SFG-13
Part
DMS3014SFG-13
Manufacturer
Description
MOSFET N-CH POWERDI3333-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 2.2V @ 250µA
Vgs(th)(Max)@Id ±12V
Vgs 45.7 nC @ 10 V
FETFeature 1W (Ta)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType POWERDI3333-8
InputCapacitance(Ciss)(Max)@Vds Schottky Diode (Body)
Series -
Qualification
SupplierDevicePackage 8-PowerVDFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9.5A (Ta)
Vgs(Max) 4310 pF @ 15 V
MinRdsOn) 13mOhm @ 10.4A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For DMS3014SFG-13
DMS3012SFG

DOINGTER

DFN3.33.3B-8-EP

DMS3012SFG-13

Diodes Incorporated

MOSFET N-CH 30V 12A POWERDI3333

DMS3012SFG-7

Diodes Incorporated

MOSFET N-CH 30V 12A POWERDI3333

DMS3014SFG-13

Diodes Incorporated

MOSFET N-CH POWERDI3333-8

DMS3014SFG-7

Diodes Incorporated

MOSFET N-CH 30V 9.5A PWRDI3333-8

DMS3014SFGQ-13

Diodes Incorporated

MOSFET N-CH 30V 9.5A PWRDI3333-8

DMS3014SFGQ-7

Diodes Incorporated

MOSFET N-CH 30V 9.5A PWRDI3333-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!