sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $6.1605 | $6.0373 | $5.8525 | $5.6677 | $5.4212 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 650V |
|---|---|
| Power Dissipation (Max): | 43W (Tc) |
| Package / Case: | TO-220-3 Full Pack |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F |
| Vgs(th) (Max) @ Id: | 4.5V @ 3mA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Detailed Description: | N-Channel 650V 30A (Tc) 43W (Tc) Through Hole TO-220F |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | Not Applicable |
| Email: | sale@shengyuic.com |
| FET Type: | N-Channel |
| Series: | SuperFET® III |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds: | 2310pF @ 400V |
| Vgs (Max): | ±30V |
| Rds On (Max) @ Id, Vgs: | 99 mOhm @ 15A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
ON Semiconductor
FAIRCHILD SEMICONDUCTOR FCPF067N65S3 Power MOSFET, N Channel, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 VNew
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!