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FDB10AN06A0
the part number is FDB10AN06A0
Part
FDB10AN06A0
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Description
MOSFET N-CH 60V 75A TO-263AB
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 60V
Power Dissipation (Max): 135W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 60V 12A (Ta), 75A (Tc) 135W (Tc) Surface Mount TO-263AB
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: PowerTrench®
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 75A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
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FDB10AN06A0

ON Semiconductor

MOSFET N-CH 60V 75A TO-263AB

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