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FQI10N20CTU
the part number is FQI10N20CTU
Part
FQI10N20CTU
Description
MOSFET N-CH 200V 9.5A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.41 $0.4018 $0.3895 $0.3772 $0.3608 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 26 nC @ 10 V
FETFeature 72W (Tc)
DraintoSourceVoltage(Vdss) 200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 9.5A (Tc)
Vgs(Max) 510 pF @ 25 V
MinRdsOn) 360mOhm @ 4.75A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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