shengyuic
shengyuic
sale@shengyuic.com
FQI7N60TU
the part number is FQI7N60TU
Part
FQI7N60TU
Manufacturer
Description
MOSFET N-CH 600V 7.4A I2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.3774 $1.3499 $1.3085 $1.2672 $1.2121 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 38 nC @ 10 V
FETFeature 3.13W (Ta), 142W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-262 (I2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.4A (Tc)
Vgs(Max) 1430 pF @ 25 V
MinRdsOn) 1Ohm @ 3.7A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQI7N60TU
FQI7N10LTU

Fairchild Semiconductor

MOSFET N-CH 100V 7.3A I2PAK

FQI7N10TU

Fairchild Semiconductor

Compliant Through Hole 19 ns Lead Free 24 ns 350 mΩ TO-262-3 7.3 A

FQI7N60TU

ON Semiconductor

MOSFET N-CH 600V 7.4A I2PAK

FQI7N60TU

onsemi

MOSFET N-CH 600V 7.4A I2PAK

FQI7N60TU

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!