shengyuic
shengyuic
sale@shengyuic.com
FQPF10N50CF
the part number is FQPF10N50CF
Part
FQPF10N50CF
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2825 $1.2569 $1.2184 $1.1799 $1.1286 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 56 nC @ 10 V
FETFeature 48W (Tc)
DraintoSourceVoltage(Vdss) 500 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220F-3
InputCapacitance(Ciss)(Max)@Vds -
Series FRFET®
Qualification
SupplierDevicePackage TO-220-3 Full Pack
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 10A (Tc)
Vgs(Max) 2096 pF @ 25 V
MinRdsOn) 610mOhm @ 5A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQPF10N50CF
FQPF10N20

onsemi

MOSFET N-CH 200V 6.8A TO220F

FQPF10N20C

ON Semiconductor

Single N-Channel 200 V 0.36 Ohm 26 nC 38 W DMOS Flange Mount Mosfet - TO-220F

FQPF10N20C

onsemi

MOSFET N-CH 200V 9.5A TO220F

FQPF10N50CF

ON Semiconductor

MOSFET N-CH 500V 10A TO-220F

FQPF10N50CF

onsemi

MOSFET N-CH 500V 10A TO220F

FQPF10N50CF

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 1

FQPF10N60C

onsemi

MOSFET N-CH 600V 9.5A TO220F

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!