shengyuic
shengyuic
sale@shengyuic.com
FQU9N25TU
the part number is FQU9N25TU
Part
FQU9N25TU
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5096 $0.4994 $0.4841 $0.4688 $0.4484 Get Quotation!
Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 20 nC @ 10 V
FETFeature 2.5W (Ta), 55W (Tc)
DraintoSourceVoltage(Vdss) 250 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType I-PAK
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-251-3 Short Leads, IPak, TO-251AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7.4A (Tc)
Vgs(Max) 700 pF @ 25 V
MinRdsOn) 420mOhm @ 3.7A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For FQU9N25TU
FQU9N25TU

onsemi

MOSFET N-CH 250V 7.4A IPAK

FQU9N25TU

Fairchild Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!