shengyuic
shengyuic
sale@shengyuic.com
GT035N06T
the part number is GT035N06T
Part
GT035N06T
Manufacturer
Description
N-CH, 60V,170A, RD(MAX)<3.5M@10V
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.746 $1.7111 $1.6587 $1.6063 $1.5365 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 70 nC @ 10 V
FETFeature 215W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220
InputCapacitance(Ciss)(Max)@Vds Standard
Series SGT
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 170A (Tc)
Vgs(Max) 5064 pF @ 30 V
MinRdsOn) 3.5mOhm @ 20A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For GT035N06T
GT0300-17M000

NMB Technologies Corporation

HYBRID 17 STEP MOTOR LOW BACKLAS

GT0300-23M201

NMB Technologies Corporation

HYBRID 23 STEP MOTOR LOW BACKLAS

GT030N08T

Goford Semiconductor

N85V,200A,RD<3.0M@10V,VTH2.0V~4.

GT035N06T

Goford Semiconductor

N-CH, 60V,170A, RD(MAX)<3.5M@10V

GT035N10M

Goford Semiconductor

N100V, 190A,RD<3.5M@10V,VTH2V~4V

GT035N10Q

Goford Semiconductor

MOSFET N-CH 100V 190A TO-247

GT035N10T

Goford Semiconductor

N100V,190A,RD<3.5M@10V,VTH2.0V~4

GT035N12T

Goford Semiconductor

MOSFET N-CH 120V 180A TO-220

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!