shengyuic
shengyuic
sale@shengyuic.com
IRF710
the part number is IRF710
Part
IRF710
Manufacturer
Description
MOSFET N-CH 400V 2A TO220AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3977 $0.3897 $0.3778 $0.3659 $0.35 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 17 nC @ 10 V
FETFeature 36W (Tc)
DraintoSourceVoltage(Vdss) 400 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220AB
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2A (Tc)
Vgs(Max) 170 pF @ 25 V
MinRdsOn) 3.6Ohm @ 1.2A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IRF710
IRF7027TR

International Rectifier

Micro8

IRF710

Vishay

MOSFET N-CH 400V 2A TO-220AB

IRF710

Vishay Siliconix

MOSFET N-CH 400V 2A TO220AB

IRF710

onsemi

MOSFET N-CH 400V 2A TO220AB

IRF710

Fairchild Semiconductor

MOSFET N-CH 400V 2A TO220AB

IRF710

Harris Corporation

PFET, 2A I(D), 400V, 3.6OHM, 1-E

IRF7101PBF

International Rectifier

SOP8

IRF7101PBF

Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8SO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!