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NDD02N60Z-1G
the part number is NDD02N60Z-1G
Part
NDD02N60Z-1G
Manufacturer
Description
MOSFET N-CH 600V 2.2A IPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 4.5V @ 50µA
Vgs(th)(Max)@Id ±30V
Vgs 10.1 nC @ 10 V
FETFeature 57W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType I-PAK
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-251-3 Short Leads, IPak, TO-251AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2.2A (Tc)
Vgs(Max) 274 pF @ 25 V
MinRdsOn) 4.8Ohm @ 1A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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