shengyuic
shengyuic
sale@shengyuic.com
NVMS5P02R2G
the part number is NVMS5P02R2G
Part
NVMS5P02R2G
Manufacturer
Description
MOSFET P-CH 20V 3.95A 8SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.924 $0.9055 $0.8778 $0.8501 $0.8131 Get Quotation!
Specification
RdsOn(Max)@Id 1.25V @ 250µA
Vgs(th)(Max)@Id -
Vgs 35 nC @ 4.5 V
FETFeature -
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn -
ProductStatus Active
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType 8-SOIC
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage 8-SOIC (0.154, 3.90mm Width)
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.95A (Ta)
Vgs(Max) 1900 pF @ 16 V
MinRdsOn) 33mOhm @ 5.4A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For NVMS5P02R2G
NVMS10P02R2G

ON Semiconductor

MOSFET P-CH 20V 10A 8SOIC

NVMS4816NR2G

onsemi

MOSFET N-CH 30V 6.8A 8SOIC

NVMS5P02R2G

onsemi

MOSFET P-CH 20V 3.95A 8SOIC

NVMSD6N303R2G

onsemi

MOSFET N-CH 30V 6A 8SOIC

NVMSTOR-ULTRA-1-1.5T

Mobiveil Technologies

NVME SSD EVALUATION BOARD, 8 NAN

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!