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SCT10N120H
the part number is SCT10N120H
Part
SCT10N120H
Manufacturer
Description
SICFET N-CH 1200V 12A H2PAK-2
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
Specification
RdsOn(Max)@Id 3.5V @ 250µA
Vgs(th)(Max)@Id -
Vgs +25V, -10V
FETFeature Surface Mount
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DriveVoltage(MaxRdsOn 20V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 22 nC @ 20 V
InputCapacitance(Ciss)(Max)@Vds -55°C ~ 200°C (TJ)
Series -
Qualification
SupplierDevicePackage 290 pF @ 400 V
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 12A (Tc)
Vgs(Max) 150W (Tc)
MinRdsOn) 690mOhm @ 6A, 20V
Package Tape & Reel (TR)
PowerDissipation(Max) H2Pak-2
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