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SGR2N60UFDTM
the part number is SGR2N60UFDTM
Part
SGR2N60UFDTM
Manufacturer
Description
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Min Operating Temperature -55 °C
Collector Emitter Saturation Voltage 2.1 V
Mount Surface Mount
Current Rating 1.2 A
Collector Emitter Voltage (VCEO) 600 V
RoHS Compliant
Max Collector Current 2.4 A
Max Operating Temperature 150 °C
Power Dissipation 25 W
Element Configuration Single
Collector Emitter Breakdown Voltage 600 V
Voltage Rating (DC) 600 V
Lead Free Lead Free
Case/Package DPAK
Max Power Dissipation 25 W
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SGR2N60UFDTM

Rochester Electronics

Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252

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