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SI5509DC-T1-E3
the part number is SI5509DC-T1-E3
Part
SI5509DC-T1-E3
Manufacturer
Description
MOSFET N/P-CH 20V 6.1A 1206-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 52mOhm @ 5A, 4.5V
Vgs(th)(Max)@Id 6.6nC @ 5V
Vgs 2V @ 250µA
Configuration N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
OperatingTemperature Surface Mount
ProductStatus Obsolete
Package/Case 1206-8 ChipFET™
GateCharge(Qg)(Max)@Vgs 455pF @ 10V
Grade
MountingType 8-SMD, Flat Lead
InputCapacitance(Ciss)(Max)@Vds 4.5W
Series TrenchFET®
Qualification
SupplierDevicePackage
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 6.1A, 4.8A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Power-Max -55°C ~ 150°C (TJ)
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