shengyuic
shengyuic
sale@shengyuic.com
SI7900AEDN-T1-E3
the part number is SI7900AEDN-T1-E3
Part
SI7900AEDN-T1-E3
Manufacturer
Description
MOSFET 2N-CH 20V 6A 1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.3855 $1.3578 $1.3162 $1.2747 $1.2192 Get Quotation!
Specification
Min Operating Temperature -55 °C
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Mount Surface Mount
Fall Time 1.3 µs
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 20 V
Drain to Source Resistance 26 mΩ
Element Configuration Dual
Number of Channels 2
Number of Pins 8
Height 1.04 mm
Number of Elements 2
Width 3.05 mm
Lead Free Lead Free
Rds On Max 26 mΩ
Max Power Dissipation 1.5 W
Drain to Source Breakdown Voltage 20 V
Gate to Source Voltage (Vgs) 12 V
Turn-On Delay Time 850 ns
Max Operating Temperature 150 °C
Power Dissipation 1.5 W
Continuous Drain Current (ID) 6 A
Rise Time 1.3 µs
Length 3.05 mm
Turn-Off Delay Time 8.6 µs
Related Parts For SI7900AEDN-T1-E3
SI7900AEDN-T1-E3

Vishay

MOSFET 2N-CH 20V 6A 1212-8

SI7900AEDN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6A PPAK 1212

SI7900AEDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 6A PPAK 1212

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!