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SI8805EDB-T2-E1
the part number is SI8805EDB-T2-E1
Part
SI8805EDB-T2-E1
Manufacturer
Description
MOSFET P-CH 8V 4MICROFOOT
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 700mV @ 250µA
Vgs(th)(Max)@Id ±5V
Vgs 10 nC @ 4.5 V
FETFeature 500mW (Ta)
DraintoSourceVoltage(Vdss) 8 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.2V, 4.5V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 4-Microfoot
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage 4-XFBGA, CSPBGA
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2.2A (Ta)
Vgs(Max) -
MinRdsOn) 68mOhm @ 1.5A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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