1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $18.3372 | $17.9705 | $17.4203 | $16.8702 | $16.1367 | Get Quotation! |
RdsOn(Max)@Id | 5V @ 3mA |
---|---|
Vgs(th)(Max)@Id | +25V, -10V |
Vgs | 65 nC @ 18 V |
FETFeature | 156W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-3 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 58A (Tc) |
Vgs(Max) | 2288 pF @ 400 V |
MinRdsOn) | 37mOhm @ 29A, 18V |
Package | Tube |
PowerDissipation(Max) | 175°C |
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