1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.0001 | $0.0001 | $0.0001 | $0.0001 | $0.0001 | Get Quotation! |
RdsOn(Max)@Id | 70mOhm @ 20A, 12V |
---|---|
Vgs(th)(Max)@Id | 46 nC @ 15 V |
Vgs | 6V @ 10mA |
FETFeature | - |
DraintoSourceVoltage(Vdss) | SiCFET (Silicon Carbide) |
OperatingTemperature | -55°C ~ 175°C (TJ) |
DriveVoltage(MaxRdsOn | 34.5A (Tc) |
ProductStatus | - |
Package/Case | TO-247-4 |
GateCharge(Qg)(Max)@Vgs | - |
Grade | - |
MountingType | Through Hole |
InputCapacitance(Ciss)(Max)@Vds | 1500 pF @ 100 V |
Series | Tube |
Qualification | |
SupplierDevicePackage | TO-247-4 |
FETType | Active |
Technology | P-Channel |
Current-ContinuousDrain(Id)@25°C | 1200 V |
Vgs(Max) | ±25V |
MinRdsOn) | 12V |
Package | 600 |
PowerDissipation(Max) | 254.2W (Tc) |
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