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AS1M025120P
the part number is AS1M025120P
Part
AS1M025120P
Description
N-CHANNEL SILICON CARBIDE POWER
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Target Price x Quantity = $0.00
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $36.5088 $35.7786 $34.6834 $33.5881 $32.1277 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 15mA
Vgs(th)(Max)@Id +25V, -10V
Vgs 195 nC @ 20 V
FETFeature 463W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 20V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-247-3
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 90A (Tc)
Vgs(Max) 3600 pF @ 1000 V
MinRdsOn) 34mOhm @ 50A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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