1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $9.8986 | $9.7006 | $9.4037 | $9.1067 | $8.7108 | Get Quotation! |
RdsOn(Max)@Id | 98mOhm @ 20A, 20V |
---|---|
Vgs(th)(Max)@Id | 79 nC @ 20 V |
Vgs | 4V @ 5mA |
FETFeature | 192W (Tc) |
DraintoSourceVoltage(Vdss) | N-Channel |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 36A (Tc) |
ProductStatus | Active |
Package/Case | TO-247-3 |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | 1475 pF @ 1000 V |
Series | - |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | SiCFET (Silicon Carbide) |
Technology | - |
Current-ContinuousDrain(Id)@25°C | 1200 V |
Vgs(Max) | +25V, -10V |
MinRdsOn) | 20V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
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