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AS1M080120P
the part number is AS1M080120P
Part
AS1M080120P
Description
N-CHANNEL SILICON CARBIDE POWER
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Target Price x Quantity = $0.00
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $9.8986 $9.7006 $9.4037 $9.1067 $8.7108 Get Quotation!
Specification
RdsOn(Max)@Id 98mOhm @ 20A, 20V
Vgs(th)(Max)@Id 79 nC @ 20 V
Vgs 4V @ 5mA
FETFeature 192W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 36A (Tc)
ProductStatus Active
Package/Case TO-247-3
GateCharge(Qg)(Max)@Vgs TO-247-3
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 1475 pF @ 1000 V
Series -
Qualification
SupplierDevicePackage Through Hole
FETType SiCFET (Silicon Carbide)
Technology -
Current-ContinuousDrain(Id)@25°C 1200 V
Vgs(Max) +25V, -10V
MinRdsOn) 20V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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