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SCTH35N65G2V-7
the part number is SCTH35N65G2V-7
Part
SCTH35N65G2V-7
Manufacturer
Description
SICFET N-CH 650V 45A H2PAK-7
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $15.092 $14.7902 $14.3374 $13.8846 $13.281 Get Quotation!
Specification
RdsOn(Max)@Id 67mOhm @ 20A, 20V
Vgs(th)(Max)@Id 73 nC @ 20 V
Vgs 5V @ 1mA
FETFeature 208W (Tc)
DraintoSourceVoltage(Vdss) N-Channel
OperatingTemperature -
DriveVoltage(MaxRdsOn 45A (Tc)
ProductStatus Active
Package/Case H2PAK-7
GateCharge(Qg)(Max)@Vgs TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds 1370 pF @ 400 V
Series -
Qualification
SupplierDevicePackage Surface Mount
FETType SiCFET (Silicon Carbide)
Technology -
Current-ContinuousDrain(Id)@25°C 650 V
Vgs(Max) +22V, -10V
MinRdsOn) 18V, 20V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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