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SCTH40N120G2V-7
the part number is SCTH40N120G2V-7
Part
SCTH40N120G2V-7
Manufacturer
Description
SILICON CARBIDE POWER MOSFET 120
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $16.965 $16.6257 $16.1167 $15.6078 $14.9292 Get Quotation!
Specification
RdsOn(Max)@Id 4.9V @ 1mA
Vgs(th)(Max)@Id +22V, -10V
Vgs 61 nC @ 18 V
FETFeature 238W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType H2PAK-7
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage -
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 36A (Tc)
Vgs(Max) 1233 pF @ 800 V
MinRdsOn) 100mOhm @ 20A, 18V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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SILICON CARBIDE POWER MOSFET 120

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