3LP01C-TB-E

Part No3LP01C-TB-E

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 30V 100MA CP

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ECAD Module

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Specification

Vgs(th) (Max) @ Id-

Vgs (Max)±10V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package3-CP

Series-

Rds On (Max) @ Id, Vgs10.4 Ohm @ 50mA, 4V

Power Dissipation (Max)250mW (Ta)

PackagingTape & Reel (TR)

Package / CaseTO-236-3, SC-59, SOT-23-3

Operating Temperature150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds7.5pF @ 10V

Gate Charge (Qg) (Max) @ Vgs1.43nC @ 10V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V

Drain to Source Voltage (Vdss)30V

Detailed DescriptionP-Channel 30V 100mA (Ta) 250mW (Ta) Surface Mount 3-CP

Current - Continuous Drain (Id) @ 25°C100mA (Ta)

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