FCP380N60E
Part NoFCP380N60E
ManufacturerON Semiconductor
DescriptionFAIRCHILD SEMICONDUCTOR FCP380N60E Power MOSFET, N Channel, 10.2 A, 600 V, 0.32 ohm, 10 V, 2.5 V
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesSuperFET® II
Rds On (Max) @ Id, Vgs380 mOhm @ 5A, 10V
Power Dissipation (Max)106W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C10.2A (Tc)
In Stock:
18075
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.41 | |
| 10 | 1.3818 | |
| 100 | 1.3395 | |
| 1000 | 1.2972 | |
| 10000 | 1.2408 |
Associated Product
MP6212DN-LF-Z
Monolithic Power Systems
Current Limit SW 1-IN 1-OUT 2.7V to 5.5V 1A 8-Pin SOIC EP T/R
Monolithic Power Systems
Current Limit SW 1-IN 1-OUT 2.7V to 5.5V 1A 8-Pin SOIC EP T/R
