FCPF380N65FL1

Part NoFCPF380N65FL1

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 650V 10.2A TO220

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Specification

Vgs(th) (Max) @ Id5V @ 1mA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-220F

SeriesFRFET®, SuperFET® II

Rds On (Max) @ Id, Vgs380 mOhm @ 5.1A, 10V

Power Dissipation (Max)33W (Tc)

PackagingTube

Package / CaseTO-220-3 Full Pack

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1680pF @ 100V

Gate Charge (Qg) (Max) @ Vgs43nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)650V

Detailed DescriptionN-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F

Current - Continuous Drain (Id) @ 25°C10.2A (Tc)

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