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FDB047N10
Part NoFDB047N10
ManufacturerON Semiconductor
DescriptionPower MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mO, D2PAK
Datasheet
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Specification
Vgs(th) (Max) @ Id4.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs4.7 mOhm @ 75A, 10V
Power Dissipation (Max)375W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFDB047N10CT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time12 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds15265pF @ 25V
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D²PAK
Current - Continuous Drain (Id) @ 25°C120A (Tc)
In Stock:
48308
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 3.3117 | |
10 | 3.2455 | |
100 | 3.1461 | |
1000 | 3.0468 | |
10000 | 2.9143 |
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