FDI33N25TU

Part NoFDI33N25TU

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 250V 33A I2PAK

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Specification

Vgs(th) (Max) @ Id5V @ 250µA

Vgs (Max)±30V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageI2PAK (TO-262)

SeriesUniFET™

Rds On (Max) @ Id, Vgs94 mOhm @ 16.5A, 10V

Power Dissipation (Max)235W (Tc)

PackagingTube

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds2135pF @ 25V

Gate Charge (Qg) (Max) @ Vgs48nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)250V

Detailed DescriptionN-Channel 250V 33A (Tc) 235W (Tc) Through Hole I2PAK (TO-262)

Current - Continuous Drain (Id) @ 25°C33A (Tc)

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