FDMS7572S
Part NoFDMS7572S
ManufacturerON Semiconductor
DescriptionMOSFET 25V N-Channel PowerTrench SyncFET
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3V @ 1mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-PQFN (5x6)
SeriesPowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs2.9 mOhm @ 23A, 10V
Power Dissipation (Max)2.5W (Ta), 46W (Tc)
PackagingOriginal-Reel®
Package / Case8-PowerTDFN
Other NamesFDMS7572SDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time26 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2780pF @ 13V
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)25V
Detailed DescriptionN-Channel 25V 23A (Ta), 49A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C23A (Ta), 49A (Tc)
In Stock:
21611
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8645 | |
| 10 | 0.8472 | |
| 100 | 0.8213 | |
| 1000 | 0.7953 | |
| 10000 | 0.7608 |
Associated Product
MT46H64M32LFMA-6WT:B
Micron
Ddr Dram, 64MX32, 5NS, Cmos, PBGA168, 12 X 12 Mm, Green, Plastic, WFBGA-168
Micron
Ddr Dram, 64MX32, 5NS, Cmos, PBGA168, 12 X 12 Mm, Green, Plastic, WFBGA-168
