FDMS8660S

Part NoFDMS8660S

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 25A POWER56

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Specification

Vgs(th) (Max) @ Id2V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package8-PQFN (5x6)

SeriesPowerTrench®

Rds On (Max) @ Id, Vgs2.4 mOhm @ 25A, 10V

Power Dissipation (Max)2.5W (Ta), 83W (Tc)

PackagingOriginal-Reel®

Package / Case8-PowerTDFN

Other NamesFDMS8660SDKR

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds4345pF @ 15V

Gate Charge (Qg) (Max) @ Vgs113nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Drain to Source Voltage (Vdss)30V

Detailed DescriptionN-Channel 30V 25A (Ta), 40A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

Current - Continuous Drain (Id) @ 25°C25A (Ta), 40A (Tc)

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