FDN352AP
Part NoFDN352AP
ManufacturerON Semiconductor
DescriptionON SEMICONDUCTOR - FDN352AP - MOSFET Transistor, P Channel, -1.3 A, -30 V, 0.18 ohm, -10 V, -2 V
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSuperSOT-3
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs180 mOhm @ 1.3A, 10V
Power Dissipation (Max)500mW (Ta)
PackagingOriginal-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Other NamesFDN352APDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time42 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs1.9nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
In Stock:
31536
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1386 | |
| 10 | 0.1358 | |
| 100 | 0.1317 | |
| 1000 | 0.1275 | |
| 10000 | 0.122 |
Associated Product
MDE6IC7120NR1
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