FDP027N08B-F102

FDP027N08B-F102

Part NoFDP027N08B-F102
ManufacturerON Semiconductor
DescriptionMOSFET N-CH 80V 120A TO-220-3
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ECAD Module FDP027N08B-F102
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Specification
Vgs(th) (Max) @ Id4.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs2.7 mOhm @ 100A, 10V
Power Dissipation (Max)246W (Tc)
PackagingTube
Package / CaseTO-220-3
Other NamesFDP027N08B_F102 FDP027N08B_F102-ND
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time39 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds13530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs178nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)80V
Detailed DescriptionN-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C120A (Tc)
In Stock: 24691
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 3.2552
10 3.1901
100 3.0924
1000 2.9948
10000 2.8646
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product