FDS6609A

Part NoFDS6609A

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 30V 6.3A 8SOIC

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ECAD Module

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Specification

Vgs(th) (Max) @ Id3V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package8-SO

SeriesPowerTrench®

Rds On (Max) @ Id, Vgs32 mOhm @ 7A, 10V

Power Dissipation (Max)2.5W (Ta)

PackagingTape & Reel (TR)

Package / Case8-SOIC (0.154", 3.90mm Width)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds930pF @ 15V

Gate Charge (Qg) (Max) @ Vgs29nC @ 10V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Drain to Source Voltage (Vdss)30V

Detailed DescriptionP-Channel 30V 6.3A (Ta) 2.5W (Ta) Surface Mount 8-SO

Current - Continuous Drain (Id) @ 25°C6.3A (Ta)

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