FQA34N20

Part NoFQA34N20

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 34A TO-3P

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Specification

Vgs(th) (Max) @ Id5V @ 250µA

Vgs (Max)±30V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-3P

SeriesQFET®

Rds On (Max) @ Id, Vgs75 mOhm @ 17A, 10V

Power Dissipation (Max)210W (Tc)

PackagingTube

Package / CaseTO-3P-3, SC-65-3

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds3100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs78nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)200V

Detailed DescriptionN-Channel 200V 34A (Tc) 210W (Tc) Through Hole TO-3P

Current - Continuous Drain (Id) @ 25°C34A (Tc)

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