FQB6N60TM
Part NoFQB6N60TM
ManufacturerON Semiconductor
DescriptionMOSFET N-CH 600V 6.2A D2PAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs1.5 Ohm @ 3.1A, 10V
Power Dissipation (Max)3.13W (Ta), 130W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 6.2A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C6.2A (Tc)
In Stock:
19034
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1988 | |
| 10 | 1.1748 | |
| 100 | 1.1389 | |
| 1000 | 1.1029 | |
| 10000 | 1.0549 |
Associated Product
