FQI3N40TU
Part NoFQI3N40TU
ManufacturerON Semiconductor
DescriptionMOSFET N-CH 400V 2.5A I2PAK
Datasheet
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Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageI2PAK (TO-262)
SeriesQFET®
Rds On (Max) @ Id, Vgs3.4 Ohm @ 1.25A, 10V
Power Dissipation (Max)3.13W (Ta), 55W (Tc)
PackagingTube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds230pF @ 25V
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)400V
Detailed DescriptionN-Channel 400V 2.5A (Tc) 3.13W (Ta), 55W (Tc) Through Hole I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
In Stock:
7210
available for immediate sale in a store
available for immediate sale in a store
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