FQP4N60

Part NoFQP4N60

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 4.4A TO-220

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ECAD Module

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Specification

Vgs(th) (Max) @ Id5V @ 250µA

Vgs (Max)±30V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageTO-220-3

SeriesQFET®

Rds On (Max) @ Id, Vgs2.2 Ohm @ 2.2A, 10V

Power Dissipation (Max)106W (Tc)

PackagingTube

Package / CaseTO-220-3

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V

Gate Charge (Qg) (Max) @ Vgs20nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)600V

Detailed DescriptionN-Channel 600V 4.4A (Tc) 106W (Tc) Through Hole TO-220-3

Current - Continuous Drain (Id) @ 25°C4.4A (Tc)

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